TC58NS256DC e2prom equivalent, tentative toshiba mos digital integrated circuit silicon gate cmos 256-mbit cmos nand e2prom.
* Organization Memory cell array 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Eras.
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). T.
2
TM
)
The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device has a 528-byte static register which allows p.
Image gallery
Download